Detectors
Silicon photonic detectors typically convert optical signals to electrical signals using one of two semiconductor structures. The positive-intrinsic-negative (PIN) diode approach is the most widely used technique. Avalanche photo diodes (APDs) are used to maximize the gain in cases where the intensity of light is very low. Kotura has demonstrated multiple designs for low-power detectors with high-speed, high-responsivity and full integration with WDM demultiplexers.
- A Compact High-Performance Germanium Photodetector Integrated on 0.25µm Thick Silicon-on-insulator Waveguide
- High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide
- Horizontal p-i-n High-Speed Ge Waveguide Detector on Large Cross-section SOI Waveguide
- Silicon Waveguide Coupled Resonator Infrared Detector
- Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguide