• Design Services
• Manufacturing Facilities
• Processing Capabilities
• Testing Capabilities
• Quality Policy

Home > Services > Processing Capabilities

Processing Capabilities

KOTURA can offer foundry services for a wide range of products at any stage of the product cycle. With our extensive experience in design, development and transfer to manufacturing our customers benefit from fast cycle times and tailored custom process services. A list of some of our main capabilities is provided. Please contact us for any further details or queries.

Contact and Projection Photolithography

KOTURA has both contact and projection lithographic facilities. A number of photo-resists development tools and techniques are employed as per the customer requirements and resist in use for both contact and projection lithography. Some of the highlights are:

   

THIN PHOTO-RESIST PROCESS
• Resist thickness: 1-2 µm
• Resolution: 1 µm ±0.1 µm
• Alignment accuracy: < ±1.0 µm

THICK PHOTO-RESIST PROCESS
• Resist thickness: 2-10 µm
• Alignment accuracy: < 1.0 µm

I-LINE STEPPER (SOURCE ARRANGEMENT)
• Resolution: 0.6 µm
• Alignment accuracy: 0.1 µm

DEEP UV SCANNER
• Resolution: 0.25 µm
• Alignment accuracy: 40 nm

Back to top

Dry and Wet Etch Capability

KOTURA is equipped with both dry and wet etch capability for silicon and dielectric materials. For metal thin films wet etch is usually used. In addition standard wet bench processes for wafer clean, mask clean, and resist removal are in place.

SILICON DRY ETCH WITH SMOOTH SIDE WALLS
• Etch depth: 0.2 - 15 um
• Side wall roughness as per requirement
• Profile angle: as required by customer

DEEP SILICON ETCH
• Etch depth up to 600 µm
• Etch rate > 3 um / min
• Profile angle: as required by customer
• Si: resist selectivity up to 100

OXIDE DRY ETCH
• Etch depth 0.2 to 15 µm
• Profile angle: as required by customer

OTHER DIELECTRIC ETCH
• Information available upon request.

Back to top

Thin Film and Diffusion Capability

KOTURA offers low stress PECVD oxide, thermal oxide, nitride, & silicon oxynitride thin film depositions.

PECVD TEOS / NITRIDE / SILICON OXYNITRIDE
• TEOS thickness 50 nm-5 µm
• Nitride thickness 50 nm-2 µm
• Silicon oxynitride thickness 50 nm-10 µm
• Film thickness uniformity within wafer ±3%
• Adjustable tensile, compressive, or ultra low stress as required by customer
• Step coverage at deep trench: 55%

SPUTTER THICKNESS AND UNIFORMITY
• Film uniformity: ±5%
• Sheet resistance within wafer: ±5%
• Titanium thickness 10~200 nm
• Aluminum thickness 20 nm~3 µm
• Step coverage at deep trench: 45%

THERMAL OXIDATION
• Thickness: 100A to 6 um
• Thickness uniformity < ±5%

BORON AND PHOSPHOROUS DIFFUSION
• Sheet resistance: ±5%
• Junction depth: ±5%

Back to top

Metrology

KOTURA is well equipped with number of state of the art metrology equipment for characterization including an in-line CDSEM capability. KOTURA has a highly skilled and experienced team working with customers as per the requirement. Some of the most commonly used measurements are:

• Film stress / wafer bow measurement
• Thin film thickness
• Film resistance measurement
• Profilometry
• Refractive index measurement
• Scanning Electron Microscopy (SEM) analysis
• Optical microscopes

Back to top

Backend Processing

For backend processing includes wafer dicing and polishing. KOTURA has number of polishing stations with diamond lapping films to meet customer requirements. KOTURA works with its contract manufacturing partner for high volume customers.